The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6576318 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 10, 2003

Filed:

Jun. 05, 2001
Applicant:
Inventors:

Heon Lee, Sunnyvale, CA (US);

Robert Bicknell-Tassius, Springfield, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/02 ;
U.S. Cl.
CPC ...
B32B 3/02 ;
Abstract

A method of forming a crystalline, phase-change layer that remains atomically smooth on its surface. Also, an atomically smooth, crystalline, phase-change layer made according to this method. The method can include forming a phase-change layer over a substrate, forming a thick capping layer over the phase-change layer, changing the phase-change layer from an amorphous phase to a crystalline phase, removing the thick capping layer, and forming a thin capping layer over the phase-change layer.


Find Patent Forward Citations

Lee, Heon. (2003). Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device (U.S. Patent No. 6576318). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6576318

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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