The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Jun. 23, 2000
Ramachandra Divakaruni, Somers, NY (US);
Jack A. Mandelman, Stormville, NY (US);
Wolfgang Bergner, Stormville, NY (US);
Gary B. Bronner, Stormville, NY (US);
Ulrike Gruening, Munich, DE;
Stephan Kudelka, Fishkill, NY (US);
Alexander Michaelis, Wappingers Falls, NY (US);
Larry Nesbit, Farmington, CT (US);
Carl J. Radens, LaGrangeville, NY (US);
Till Schloesser, Munich, DE;
Helmut Tews, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for clearing an isolation collar from a first interior surface of a deep trench at a location above a storage capacitor while leaving the isolation collar at other surfaces of the deep trench. A barrier material is deposited above a node conductor of the storage capacitor. A layer of silicon is deposited over the barrier material. Dopant ions are implanted at an angle into the layer of deposited silicon within the deep trench, thereby leaving the deposited silicon unimplanted along one side of the deep trench. The unimplanted silicon is etched. The isolation collar is removed in locations previously covered by the unimplanted silicon, leaving the isolation collar in locations covered by the implanted silicon.