The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Jan. 09, 2002
Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
Applicant:
Inventors:
Ce Ma, Apex, NC (US);
Qing Min Wang, Edison, NJ (US);
Assignee:
The BOC Group, Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/416 ;
U.S. Cl.
CPC ...
C23C 1/416 ;
Abstract
Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.