The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Jan. 22, 2002
Omer H. Dokumaci, Wappingers Falls, NY (US);
Richard D. Kaplan, Wappingers Falls, NY (US);
Mukesh V. Khare, White Plains, NY (US);
Suryanarayan G. Hegde, Hollowville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming an oxide layer on a silicon substrate includes forming a sacrificial oxide layer on the silicon substrate, implanting nitrogen into the silicon substrate, annealing the silicon substrate having implanted nitrogen, removing the sacrificial oxide layer from the silicon substrate, and forming an oxide layer on the silicon substrate. The dose of nitrogen implanted into silicon is preferably higher than 1e14 cm . The annealing process is preferably performed at temperatures in a range from about 550° C. to about 1000° C. and for a time period between about 1 second and about 2 hours.