The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Jul. 17, 2000
Prabhakar P. Tripathi, Santa Clara, CA (US);
Zhihai Wang, Sunnyvale, CA (US);
Weidan Li, San Jose, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method of forming a metallization interconnection system within a via. A first liner layer of titanium is deposited to a first thickness in the following manner. A substrate containing the via is placed within an ion metal plasma deposition chamber that contains a titanium target. The ion metal plasma deposition chamber is evacuated to a first base pressure. A first flow of argon is introduced to the ion metal plasma deposition chamber at a first deposition pressure. The substrate is biased to a first voltage. A plasma within the ion metal plasma deposition chamber is energized at a first power for a first length of time. A second liner layer of Ti N is deposited to a second thickness on top of the first liner layer of titanium in the following manner. A first flow of nitrogen and a second flow of argon are introduced to the ion metal plasma deposition chamber at a second deposition pressure. The substrate is biased to a second voltage. The plasma within the ion metal plasma deposition chamber is energized at a second power for a second length of time, after which the substrate is removed from the ion metal plasma deposition chamber. Finally, a third liner layer of titanium nitride is deposited in a second deposition chamber, and a plug of tungsten is deposited.