The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Mar. 05, 2001
Applicant:
Inventors:
Kenji Yamaguchi, Omiya, JP;
Kazuki Mizushima, Omiya, JP;
Assignee:
Mitsubishi Materials Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B32B 7/00 ; B32B 3/10 ; G02B 1/02 ; H01L 3/100 ; H01L 3/300 ; H05B 3/312 ;
U.S. Cl.
CPC ...
B32B 7/00 ; B32B 3/10 ; G02B 1/02 ; H01L 3/100 ; H01L 3/300 ; H05B 3/312 ;
Abstract
An optical material including a crystalline silicon and Fe Si in the form of dots, islands, or a film is provided. The Fe Si has a symmetrical monoclinic crystalline structure belonging to the P2 /c space group and is synthesized at the surface or in the interior of the crystalline silicon. The monoclinic structure corresponds to a deformed structure of &bgr;-FeSi generated by heteroepitaxial stress between the {110} plane of the Fe Si and the {111} plane of the crystalline silicon. The value of x is 0.85≦x≦1.1. An optical element using the optical material is also provided.