The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Dec. 21, 1999
Hisao Asakura, Ome, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The method of manufacturing a semiconductor integrated circuit device, which has an n-channel MIS transistor and a p-channel MIS transistor formed in the same semiconductor substrate, comprises ion implantation processes using the same photoresist as masks. The ion implantation processes include a step of injecting an impurity ion into the semiconductor substrate to form the source and drain of an n-channel MOSFET a p type semiconductor region for suppressing the short channel effect, and an n-well power supply region and a step of injecting an impurity ion into the semiconductor substrate to form the source and drain of a p-channel MOSFET an n type semiconductor region for suppressing the short channel effect, and a p-well power supply region