The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Dec. 31, 1998
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
A plurality of source/drain regions are formed on a surface of a silicon substrate at a prescribed space. Floating gate electrodes are formed on sides of a channel region closer to the source/drain regions respectively through a first insulator film. Projections are formed on peripheral edge portions of the floating gate electrodes respectively. A control gate electrode is formed over the channel region and the floating gate electrodes through a second insulator film. The control gate electrode is opposed to the floating gate electrodes at one surface through the second insulator film.