The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Aug. 02, 2000
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming an HDP CVD oxide layer over a metal line structure, comprising the following steps. A semiconductor structure having metal lines formed thereon to form a metal line structure is provided. The metal lines having exposed sidewalls. The metal line structure is treated with N O to form a layer of Al O on each of the metal line exposed sidewalls to form a N O treated metal line structure. An HDP CVD oxide layer is formed over the N O treated metal line structure to form a resulting metal line structure. Whereby the resulting metal line structure is free of metal voids.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile