The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Jul. 31, 1997
Chorng-Ping Chang, Berkeley Heights, NJ (US);
Chien-Shing Pai, Bridgewater, NJ (US);
Agere Systems, Inc., Allentown, PA (US);
Abstract
The invention is a process for device fabrication that utilizes shallow trench isolation. The process involves the steps of forming an oxidation barrier region, e.g., silicon nitride, above a silicon substrate, providing an opening in the oxidation barrier region and in any underlying regions deposited on the silicon, providing a trench in the silicon substrate at the opening, depositing a dielectric material such as silicon dioxide in the trench, typically planarizing the trench silicon dioxide, and subsequently performing an oxidation step. The oxidation step rounds the otherwise sharp corners of the silicon at the area where the trench silicon dioxide meets the pad oxide. The invention thereby reduces or eliminates sharp corners that contribute to leakage current.