The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Jan. 18, 2001
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system according to the present invention is a system for forming a thin film of SiO on an Si wafer W and is provided with a reactant gas exhaust system for reducing the pressure around the Si wafer W, a reactant gas supply system for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber having a lamp group G for heating the Si wafer W, and a wafer support member The Si wafer W is set in the chamber the interior of the chamber is depressurized, the Si wafer W is mounted on the wafer support member the reactant gases X as a mixture of hydrogen gas Gh and oxygen gas Go are supplied into a space Sb in the chamber to flow, and the Si wafer W is heated by the lamp group G.