The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Dec. 06, 2001
Applicant:
Inventors:
Oleg V. Kononchuk, Brush Prairie, WA (US);
Sergei V. Koveshnikov, Vancouver, WA (US);
Zbigniew J. Radzimski, Brush Prairie, WA (US);
Neil A. Weaver, Battle Ground, WA (US);
Assignee:
SEH America, Inc., Vancouver, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/520 ;
U.S. Cl.
CPC ...
C30B 1/520 ;
Abstract
An improved method of obtaining a wafer exhibiting high resistivity while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot in the presence of a magnetic field, such crystal having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 5 to 10 ppma and b) processing the ingot into a wafer.