The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Jun. 14, 2002
Hei-Lun Chen, Jubei, TW;
Kt Ou, Hsin Chu, TW;
Claire Chen, Hsinchu, TW;
Shr-Jung Chung, Taichung, TW;
Che Heng Wang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a method for fabricating an optoelectronic microelectronic fabrication, and the optoelectronic microelectronic fabrication fabricated in accord with the method, there is formed at least in part within an annular gap interposed between: (1) a patterned optical barrier layer which defines an aperture; and (2) a electrical contact formed within the aperture and laterally separated from the patterned optical barrier layer by the annular gap, an annular optical baffle layer. Within the present invention, when there is further formed over the patterned optical barrier layer and electrically connected with the electrical contact a pixel electrode plate layer, the annular optical baffle layer provides for attenuated light leakage to a switching element formed beneath the patterned optical barrier layer.