The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Dec. 01, 2000
Shin Hashimoto, Osaka, JP;
Kyoko Egashira, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
After a cobalt film is deposited on a silicon-containing film formed on a semiconductor substrate, a first heat treatment at a relatively low temperature is performed with respect to the semiconductor substrate to cause a reaction between the cobalt film and the silicon layer and thereby form a Co Si layer or CoSi layer in at least a surface portion of the silicon layer. Then, a silicon-containing film is deposited on the Co Si layer or CoSi layer and a second heat treatment at a relatively high temperature is performed with respect to the semiconductor substrate to cause a reaction between the silicon-containing film and the Co Si layer or CoSi layer and thereby form a CoSi layer in at least a surface portion of the silicon layer.