The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
May. 24, 2001
Ran Manor, Haifa, IL;
Kulicke & Soffa Investments, Inc., Wilmington, DE (US);
Abstract
A method for singulating semiconductor wafers comprises the steps of aiming a first and a second laser beam over a top surface of the substrate; forming scribe lines in the coating layer by scanning the first laser beam across the coating layer; and cutting through the substrate along the scribe lines with the second laser beam to form a respective kerf. The apparatus includes a first laser having a first wavelength placed over the coating layer of the substrate, and a second laser having a second wavelength different from that of the first laser placed over a surface of the substrate. The coating layer has a first absorption coefficient relative to a wavelength of the first laser and the semiconductor substrate has a second absorption coefficient less than the first absorption coefficient. Energy from the first laser beam is absorbed into the coating layer to form scribe lines therein, and the second laser beam cuts through the substrate along the scribe lines.