The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Apr. 19, 2001
Applicant:
Inventors:
Yoshiaki Hasegawa, Osaka, JP;
Ayumu Tsujimura, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Yuzaburo Ban, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 5/02 ;
U.S. Cl.
CPC ...
C30B 5/02 ;
Abstract
After a Group III-V compound semiconductor layer, to which a p-type dopant has been introduced, has been formed over a substrate, the compound semiconductor layer is annealed. In the stage of heating the compound semiconductor layer, atoms, deactivating the p-type dopant, are eliminated from the compound semiconductor layer by creating a temperature gradient in the compound semiconductor layer.
Hasegawa, Yoshiaki. (2003). Formation method for semiconductor layer (U.S. Patent No. 6562129). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6562129
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile