The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Sep. 22, 2000
Hitoshi Abiko, Tokyo, JP;
NEC Electronics Corporation, Kawasaki, JP;
Abstract
In a memory cell area (A) of a semiconductor storage device, a capacitor ( ) formed on a first insulating layer ( ) formed so as to cover MOS transistors ( ) includes a pillar-shaped insulating member ( ), a first capacitance electrode ( ) formed on the side surface of the pillar-shaped insulating member ( ), a capacitance insulating film ( ) formed on the first capacitance electrode ( ) and a second capacitance electrode ( ) formed on the capacitance insulating film ( ). A conductive member ( ) for connecting the source or drain ( ) of the MOS transistor ( ) to the first capacitance electrode ( ) is filled in a connection opening ( ) formed in the first insulating layer ( ). In a peripheral circuit area (B) other than the memory cell area (A) containing plural memory cells each having the MOS transistor ( ) and the capacitor ( ), a second insulating layer ( ) which is formed simultaneously with the formation of the pillar-shaped insulating member ( ) of the capacitor ( ) and has the same height as the pillar-shaped insulating member ( ) is formed on the first insulating layer ( ).