The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Nov. 15, 2000
Applicant:
Inventors:
Stephen Ward Downey, Orlando, FL (US);
Allen Yen, Orlando, FL (US);
Thomas Michael Wolf, Orlando, FL (US);
Paul B. Murphey, Winter Garden, FL (US);
Assignee:
Agere Systems, Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1461 ;
Abstract
A process ( ) for forming a metal interconnect ( ) in a semiconductor device ( ) using a photoresist layer ( ) having a thickness (T) of no more than 0.66 microns without forming a notch in the side ( ) of the interconnect. A reactive ion etching process ( ) used to remove portions of a metal layer ( ) to form the interconnect includes a burst etch step ( ) wherein a first high flow rate ( ) of passivation gas is delivered, followed by a main metal etch step ( ) wherein the flow rate of passivation gas is reduced to a second lower value.