The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Nov. 13, 2000
Gottfried Schuh, Augsburg, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A thyristor includes a semiconductor body having a first emitter layer and a first base layer on an anode side, a second base layer and a second emitter layer on a cathode side, a cathode contact, and an electrically insulating insulation layer having openings. The insulation layer is disposed between the second emitter layer and the cathode contact. The openings have dimensions and spacings making the insulation layer form an electrical resistor for reducing current filamentation. A series resistor is incorporated on the cathode side and is formed by the pierced insulation layer between the cathode side metallizing, forming the terminal contact, and the doped semiconductor material of the emitter on the cathode side. The openings are preferably cylindrical. In a silicon component element, the insulation layer preferably is SiO or Si N , or a layered succession of SiO and Si N .