The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
May. 29, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
Methods of forming Ta O layers in a process chamber are disclosed. A Ta O layer can be maintained at a first temperature that is less than a temperature for crystallization of the Ta O layer. At least one of a position of the Ta O layer in the process chamber relative to the heater and a pressure in the process chamber is changed to increase the temperature of the Ta O layer to about the temperature for crystallization.
Park, Ki-yeon. (2003). Methods of fabricating capacitors including ta2o5 layers in a chamber including changing a ta2o5 layer to heater separation or chamber pressure (U.S. Patent No. 6555394). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6555394
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