The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Sep. 01, 2000
Applicant:
Inventors:
Masayoshi Koike, Aichi, JP;
Shiro Yamasaki, Aichi, JP;
Assignee:
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ;
U.S. Cl.
CPC ...
H01L 3/1072 ;
Abstract
Aluminum gallium nitride (Al Ga N, 0<x<1) is employed as a substrate of a Group III nitride compound semiconductor device. In light-emitting diodes and laser diodes employing the substrate, crack generation is prevented, even when a thick cladding layer formed of aluminum gallium nitride (Al Ga N, 0<x<1) is stacked on the substrate. The smaller the difference in Al compositional proportion between the substrate and an aluminum gallium nitride (Al Ga N, 0<x<1) layer, the less likely the occurrence of crack generation.