The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jun. 14, 2002
Hsu-Sheng Yu, Hsinchu, TW;
Chun-Hung Lee, Hsinchu, TW;
Other;
Abstract
A method for fabricating nonvolatile memory devices includes forming one or more polyislands, each having a conductive layer and a dielectric layer, on a dielectric layer of a substrate before the creation of control gates on the memory device. In particular, the polyislands may be formed by providing a substrate with a dielectric layer on a surface of the substrate, and forming one or more bar-like structures on the substrate. Each of the bar-like structures includes a conductive layer and a dielectric layer. The bar-like structures are then patterned with compositions having various etching sensitivities for the components of the bar-like structures, to thereby create one or more polyislands before the addition of a second conductive layer over the resulting structure.