The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jun. 11, 2002
Kun-Jung Wu, Hsinchu, TW;
Powerchip Semiconductor Corp., Shinchu, TW;
Abstract
A method of manufacturing a memory device. A substrate having an active region, a plurality of gate structures and a plurality of source/drain regions are provided. An inter-layer dielectric layer is formed over the substrate. A global opening that exposes the source/drain regions for forming contacts and the gate structures inside the active region is formed in the inter-layer dielectric layer. A conductive layer that completely fills the global opening is formed over the substrate. A portion of the conductive layer and the inter-layer dielectric layer is removed to expose the upper surface of the gate structures, thereby forming a plurality of contacts between the gate structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile