The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jan. 10, 2000
Applicant:
Inventors:
Ofer Sneh, Mountain View, CA (US);
Thomas E. Seidel, Sunnyvale, CA (US);
Assignee:
Genus Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/504 ;
U.S. Cl.
CPC ...
C30B 2/504 ;
Abstract
A method and apparatus for fabricating a metal-insulator-metal capacitor by performing atomic layer deposition (ALD). A fully integrated process flow prevents electrode-dielectric contamination during an essential ex situ bottom electrode patterning step.
Sneh, Ofer. (2003). Fully integrated process for mim capacitors using atomic layer deposition (U.S. Patent No. 6551399). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6551399
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile