The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Oct. 25, 2001
Kameswara K. Rao, San Jose, CA (US);
Martin L. Voogel, Los Altos, CA (US);
James Karp, Saratoga, CA (US);
Shahin Toutounchi, Pleasanton, CA (US);
Michael J. Hart, Palo Alto, CA (US);
Daniel Gitlin, Palo Alto, CA (US);
Kevin T. Look, Fremont, CA (US);
Jongheon Jeong, Campbell, CA (US);
Radko G. Bankras, Enschede, NL;
Xilinx, Inc., San Jose, CA (US);
Abstract
Memory cell structures and related circuitry for use in non-volatile memory devices can be fabricated utilizing standard CMOS processes, for example, 0.18 micron or 0.15 micron processes. Advantageously, the cell structures can be programmed so that a conductive path is formed between like type materials, for example, between a p-type gate and a p-type source/drain region or an n-type gate and an n-type source/drain region. Programming cells in this manner advantageously provides a programmed cell having a low, linear resistance after programming.