The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Jan. 17, 2002
Jun Li, Foster City, CA (US);
Silicon Storage Technology, Inc., Sunnyvale, CA (US);
Abstract
A high speed bias voltage generating circuit for use with semiconductor devices. The bias voltage generating circuit includes three circuits or circuit portions and which cooperatively control the output voltage and current of the circuit . The standby circuit is active during a standby mode. The standby circuit provides.a stable standby voltage Vout for the circuit , and generates substantially no current in standby mode. The bias circuit is active during a bias mode and provides a stable bias voltage Vout for the circuit . The boost circuit is active during the transition from standby mode to bias mode, and is effective to quickly lower or “pull down” the output voltage from Vout to Vout .