The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Sep. 14, 1999
Satish D. Athavale, Fishkill, NY (US);
Martin Gutsche, Dorpen, DE;
Other;
Abstract
A method for etching material which does not readily form volatile compounds in a plasma includes providing a plasma etch chamber including a wafer electrode at an initial temperature. The wafer electrode supports a wafer, and the wafer includes a layer of the material which does not readily form volatile compounds in plasma. The wafer is bombarded with charged particles from a plasma generated in the plasma etch chamber to impart thermal energy to the wafer. A reactive gas flow is provided to react with etch products of the material. Bias power is applied to the wafer electrode to impart bombardment energy to the charged particles incident on the wafer from the plasma such that a predetermined temperature is generated on a surface of the wafer wherein the wafer electrode is maintained at about the initial temperature.