The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Oct. 31, 2000
Scott R. Summerfelt, Cupertino, CA (US);
Theodore S. Moise, Los Altos, CA (US);
Guoqiang Xing, Plano, TX (US);
Luigi Colombo, Dallas, TX (US);
Tomoyuki Sakoda, San Jose, CA (US);
Stephen R. Gilbert, San Francisco, CA (US);
Alvin L. S. Loke, Singapore, SG;
Shawming Ma, Sunnyvale, CA (US);
Rahim Kavari, Campbell, CA (US);
Laura Wills-Mirkarimi, Sunol, CA (US);
Jun Amano, Hillsborough, CA (US);
Agilent Technologies Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure ( of FIG. ), the bottom electrode having a top surface and sides; forming a capacitor dielectric ( of FIG. ) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode ( and of FIG. ) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer ( and of FIG. ) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.