The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2003

Filed:

Aug. 14, 2001
Applicant:
Inventors:

Ming-Hung Chou, Miaoli Hsien, TW;

Hsin-Yi Ho, Hsinchu, TW;

Smile Huang, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

An flash memory erase method. A bias V is applied to a gate of a memory cell. A bias V is applied to a source/drain region of the memory cell to execute an erase operation. The bias V is increased from an initial value to a predetermined value over time. During the increase of the bias V , no inspection is performed. Whether the memory of each memory cell has been erased is inspected. If the erase operation is complete, the erase operation is over. If not, a voltage raise erase-inspection step is performed at least once until it is confirmed that the memory of all the memory cells has been erase. Each voltage raise erase-inspection step includes an erase step with a raised voltage and an inspection step afterwards.


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