The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Oct. 10, 2000
Applied Materials Inc., Santa Clara, CA (US);
Abstract
Conventional methods of etching TiSi use Cl or HBr as the plasma etchant. However, these methods can lead to undesirable residues, due to the presence of silicon nodules in the TiSi The present invention overcomes the residue problem by adding a fluorine containing gas to the plasma etchant, which is then able to effectively etch the Si nodules at an etch rate which is approximately the same as the etch rate of the TiSi , so that the undesirable residue is not formed. A method of etching TiSi is provided, wherein the surface of the TiSi is exposed, typically through a patterned mask, to a plasma etchant. The plasma etchant comprises (i) at least one fluorine containing gas, such as SF , NF , C F , and compatible mixtures of such gases; and (ii) a gas selected from the group consisting of HBr, Cl , and combinations thereof.