The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Jun. 28, 2001
Applicant:
Inventor:
Brian S. Lee, Hsinchu, TW;
Assignee:
Promos Technologies, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/1425 ; H01L 2/18249 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/1425 ; H01L 2/18249 ;
Abstract
An advanced contact integration technique for deep-sub-150 nm semiconductor devices such as W/WN gate electrodes, dual work function gates, dual gate MOSFETs and SOI devices. This technique integrates self-aligned raised source/drain contact processes with a process employing a W-Salicide combined with ion mixing implantation. The contact integration technique realizes junctions having low contact resistance (R ), with ultra-shallow contact junction depth (X ) and high doping concentration in the silicide contact interface (N ).