The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Dec. 20, 2001
Applicant:
Inventors:
Hiroyuki Ohta, Tsuchiura, JP;
Hideo Miura, Koshigaya, JP;
Kazushige Sato, Oume, JP;
Takeshi Kimura, Higashimurayama, JP;
Hiyoo Masuda, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A semiconductor device capable of operating at a high speed or of having many functions. In this device, delamination of buried electrodes is prevented and thus high reliability is offered. The depth A of contact holes, the minimum linewidth R of a lower metallization layer, and the thickness B of the lower metallization layer satisfy relations given by (0.605/R) <A<2.78−1.02B+0.172B .
Ohta, Hiroyuki. (2003). Semiconductor device and method of fabricating same (U.S. Patent No. 6544884). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6544884
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile