The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Jun. 18, 2001
Applicant:
Inventors:
David E. Kotecki, Hopewell Junction, NY (US);
William H. Ma, Fishkill, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/120 ;
Abstract
A DRAM capacitor contact comprised of a silicon oxide layer with a trench having sidewalls and a form in the silicon oxide layer. A dielectric liner is coated on the sidewalls of the trench. A metal layer is then deposited between the sidewalls and polished to form a bit-line. One or more dielectric layers are deposited above the bit-lines and VIAs are formed in these layers. A sidewall is formed in the VIA above the bit-line and the VIAs are extended down to the silicon substrate and filled with a conductive material and planarized, forming the capacitor contact.