The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2003

Filed:

Jun. 02, 2000
Applicant:
Inventors:

Wei-Fan Chen, Taichung, TW;

Shu-Chuan Lee, Changhua, TW;

Ta-Lee Yu, Hsinchu Hsien, TW;

Shi-Tron Lin, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/22 ; H02H 9/04 ;
U.S. Cl.
CPC ...
H02H 3/22 ; H02H 9/04 ;
Abstract

A high-voltage tolerance input buffer and a high-voltage ESD protection circuit connected to a pad of an integrated circuit for preventing rapid gate oxide aging. The high-voltage tolerance input buffer of the present invention comprises a voltage-sharing circuit and a switch circuit, wherein the voltage-sharing circuit is connected between the pad and a power rail and generates a reference voltage not higher than the voltage of the pad. The switch circuit is connected to the voltage-sharing circuit and comprises a control gate to control the switching operation of the switch circuit according to the reference voltage. The present invention can be implemented to solve the rapid gate oxide aging problem without incurring any change in the original process flow by employing a voltage-sharing circuit.


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