The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Feb. 09, 2001
Taro Sugizaki, Kawasaki, JP;
Toshiro Nakanishi, Kawasaki, JP;
Kyoichi Suguro, Yokohama, JP;
Atsushi Murakoshi, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device is fabricated by a method comprising the steps of: selectively introducing a halogen element or argon into a device region of a silicon substrate ; and wet oxidizing the silicon substrate in an ambient atmosphere which an H O partial pressure is less than 1 atm to thereby form a silicon oxide film in the device region of the silicon substrate , and a silicon oxide film thinner than the silicon oxide film in a device region of the silicon substrate . Whereby the silicon oxide film in a device region with the halogen element or argon introduced can be selectively formed thick. The silicon oxide films are formed by the wet oxidation, whereby the gate insulation films can be more reliable than those formed by the dry oxidation.