The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Sep. 17, 2001
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
Within each of a pair of methods for forming each of a pair of microelectronic fabrications with reduced cracking within each of a pair of silicon oxide dielectric layers there is employed at least one stress reducing layer. The at least one stress reducing layer is formed of a silicon and nitrogen containing dielectric material, such as a silicon nitride dielectric material or a silicon oxynitride dielectric material.
Wang, Ming-Tsong. (2003). Composite microelectronic dielectric layer with inhibited crack susceptibility (U.S. Patent No. 6541370). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6541370
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile