The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
May. 15, 2002
Applicant:
Inventors:
Marc W. Cantell, Sheldon, VT (US);
Rajesh Chopdekar, Edison, NY (US);
Peter J. Geiss, Underhill, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18042 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/18042 ; H01L 2/14763 ;
Abstract
A method of fabricating a bipolar transistor. The method comprising: forming an emitter opening in a dielectric layer to expose a surface of a base layer; performing a clean of the exposed surface, the clean removing any oxide present on the surface and passivating the surface to inhibit oxide growth; and forming an emitter layer on the surface after the performing a clean.
Cantell, Marc. (2003). Method of fabricating a bipolar transistor having a realigned emitter (U.S. Patent No. 6541336). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6541336
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile