The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2003

Filed:

Aug. 11, 2000
Applicant:
Inventors:

Teruaki Okino, Kamakura, JP;

Shinichi Kojima, Tsukuba, JP;

Assignee:

Nikon Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 ;
U.S. Cl.
CPC ...
G03C 5/00 ;
Abstract

Methods and apparatus are provided for performing charged-particle-beam microlithography at improved accuracy. A pattern is formed on a substrate (wafer) by repeated shot exposure of respective areas on a wafer substrate mounted on a wafer stage. Exposure of the wafer is made while the wafer stage is undergoing continuous motion and the charged particle beam making the exposure is being deflected continuously. As the magnitude of the beam deflection changes according to the motion of the stage, correction data for deflecting the beam are updated appropriately so as to correct deflection aberrations continuously.


Find Patent Forward Citations

Okino, Teruaki. (2003). Methods for charged-particle-beam microlithography including correction of deflection aberrations, and device-manufacturing methods comprising same (U.S. Patent No. 6541169). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6541169

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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