The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Aug. 11, 2000
Applicant:
Inventors:
Teruaki Okino, Kamakura, JP;
Shinichi Kojima, Tsukuba, JP;
Assignee:
Nikon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 ;
U.S. Cl.
CPC ...
G03C 5/00 ;
Abstract
Methods and apparatus are provided for performing charged-particle-beam microlithography at improved accuracy. A pattern is formed on a substrate (wafer) by repeated shot exposure of respective areas on a wafer substrate mounted on a wafer stage. Exposure of the wafer is made while the wafer stage is undergoing continuous motion and the charged particle beam making the exposure is being deflected continuously. As the magnitude of the beam deflection changes according to the motion of the stage, correction data for deflecting the beam are updated appropriately so as to correct deflection aberrations continuously.