The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Jul. 26, 2001
Michihiko Togashi, Kanagawa, JP;
Osamu Kawatoko, Kanagawa, JP;
Mitutoyo Corporation, Kawasaki, JP;
Abstract
There is provided a small, high-performance electrostatic capacitance probe device and a displacement measuring circuit using the probe device. The electrostatic capacitance probe device is formed from a processed, stacked substrate with a silicon substrate/insulator/silicon substrate structure. A support substrate ( ) is formed through a process of etching the first silicon substrate to remove undesired portions. A probe ( ) is formed by etching the second silicon substrate and provided with a proximal electrode portion ( ) secured on the support substrate ( ) by means of the insulator ( ) and a beam portion ( ) separated from the support substrate ( ) by removing the insulator ( ) from beneath the beam portion ( ). A pair of detecting electrodes ( ) is formed by etching the second silicon substrate, secured on the support substrate ( ) by the insulator ( ) and located to sandwich a portion of the beam portion ( ) close to the proximal electrode portion ( ). These electrodes have sides capacitively coupled with sides of the beam portion ( ). Deformation of the tip of the probe ( ) caused from contact with a work is detected from a differential capacitance variation between the probe ( ) and the pair of detecting electrodes ( ).