The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2003

Filed:

Nov. 29, 1999
Applicant:
Inventors:

Atsuko Sakata, Yokohama, JP;

Keiichi Sasaki, Yokohama, JP;

Nobuo Hayasaka, Yokosuka, JP;

Katsuya Okumura, Yokohama, JP;

Hirotaka Nishino, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract

After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 &mgr;m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.


Find Patent Forward Citations

Sakata, Atsuko. (2003). Semiconductor device having an electrode structure comprising a conductive fine particle film (U.S. Patent No. 6538323). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6538323

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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