The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Feb. 02, 2001
Concetta E. Riccobene, Mountain View, CA (US);
Dong-Hyuk Ju, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A transistor on an SOI wafer has a subsurface recombination area within its body. The recombination area includes one or more doped subsurface islands, the doped islands having the same conductivity type as that of a source and a drain on opposite sides of the body, and having an opposite conductivity type from the remainder of the body. The doped subsurface island(s) may be formed by a doping implant into a surface semiconductor layer, for example through an open portion of a doping mask, the opening portion created for example by removal of a dummy gate. The doping of the islands may be performed so that the doping level of the island(s) is approximately the same as that of the body, thus enabling both Shockley-Read-Hall (SRH) and Auger recombination to take place.