The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Mar. 24, 2000
Shinobu Yamazaki, Tenri, JP;
Kazuya Ishihara, Kyoto-fu, JP;
Tetsu Miyoshi, Yokohama, JP;
Jun Kudo, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A contact plug electrically connected with a MOS transistor is formed in a first interlayer dielectric. Then, a barrier metal material is deposited over the first interlayer dielectric and the contact plug, and patterned into a barrier metal electrically connected with the contact plug. After a SiN film is formed as an anti-oxygen-permeation film over the barrier metal and the first interlayer dielectric, the film is abraded by a chemical mechanical polishing technique until a top surface of the barrier metal is exposed. Then, a lower electrode material, a dielectric material and an upper electrode material are deposited in this order on the SiN film and the barrier metal, and then patterned such that a resulting lower electrode covers at least the entire upper surface of the barrier metal. Thereafter a second interlayer dielectric is deposited, and a heat treatment is performed in an oxygen ambient to recover film quality of a capacitor dielectric.