The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Sep. 08, 2000
Shuichi Ishizuka, Yamanashi-Ken, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
When a semiconductor device using fluorine-containing carbon films (CF films) as inter-layer dielectric films is fabricated using boron nitride films (BN films) as hard masks , total inter-wiring capacitance of the semiconductor device can be made low. After a first CF film as an inter-layer dielectric film is stacked, a hard mask composed of a BN film is stacked on the CF film , and thereafter selectively removed by etching to form a predetermined groove pattern. The CF film is next etched by using the hard mask as a mask to form grooves for forming wiring layers . Then, Cu is buried into the grooves to complete the semiconductor device. Since this semiconductor device uses the CF film and the MN film having low relative dielectric constants, the relative dielectric constant of the entire semiconductor device can be made low. As a result, its total inter-wiring capacitance can be made low as well.