The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Mar. 09, 2001
France Télécom, Paris, FR;
Abstract
The invention concerns a method which consists in: (a) stabilization of the monocrystalline silicon substrate temperature at a first predetermined temperature T of 400 to 500° C.; (b) chemical vapour deposition (CVD) of germanium at said first predetermined temperature T until a base germanium layer is formed on the substrate, with a predetermined thickness less than the desired final thickness; (c) increasing the CVD temperature from said first predetermined temperature T up to a second predetermined temperature T of 750 to 850° C.; and (d) carrying on with CVD of germanium at said second predetermined temperature T until the desired final thickness for the monocrystalline germanium final layer is obtained. The invention is useful for making semiconductor devices.