The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Sep. 26, 2000
Eiji Kamiya, Kamakura, JP;
Toshitake Yaegashi, Yokohama, JP;
Kazuhiro Shimizu, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Yuji Takeuchi, Kawasaki, JP;
Norihisa Arai, Omiya, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device comprises: a semiconductor substrate; a plurality of first diffusion layers having a low impurity density, the first diffusion layers being formed on the surface of the semiconductor substrate; a plurality of second diffusion layers having a high impurity density, the second diffusion layers being formed on the surface of the semiconductor substrate; a plurality of first contacts, each of which contacts the first diffusion layers and each of which is formed of a semiconductor; and a plurality of second contacts, each of which contacts the second diffusion layers and each of which is formed of a metal.