The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Dec. 03, 1999
Applicant:
Inventors:
Hsueh-Wen Wang, Taipei, TW;
Tsan-Wen Liu, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
The invention describes a method for lowering particle count after tungsten etch back, in which method a plasma ashing step is performed after a brush cleaning step to eliminate polymer residues that remain on the metal barrier layer after tungsten etch back. Another tungsten etch back process is further performed to remove a tungsten oxide film that is formed by reacting the tungsten layer with an O gas used in the plasma ashing step.