The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Nov. 24, 1999
Applicant:
Inventors:
Michal Danek, Sunnyvale, CA (US);
Karl B. Levy, Los Altos, CA (US);
Hyoun S. Choe, La Palma, CA (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/131 ;
Abstract
Diffusion barriers are used in integrated circuits. The present method of depositing diffusion barriers eliminates the formation of high resistivity phases, providing high electrical conductivity and diffusion suppression between the interconnect conductors, for example copper, and the semiconductor device. In a preferred embodiment, the diffusion barrier is formed by depositing a film of binary transition metal nitride then treating the film in a gas containing silicon in order to form a layer of silicon rich material on the surface of the binary transition metal nitride film.