The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Dec. 19, 2001
Applicant:
Inventor:
Wen-Shiang Liao, Miaoli Hsien, TW;
Assignee:
Winbond Electronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of fabricating a self-aligned silicide (salicide). A gate and a source/drain region are formed in the substrate. An ion implantation process is performed to dope surfaces of the gate and the source/drain region with metal ions. A thermal process is performed to have the metal ions react with silicon in surfaces of the gate and the source/drain region, so as to form silicide layers on the gate and the source/drain region. The metal ions include cobalt ions, titanium ions, nickel ions, platinum ions and palladium ions.