The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2003

Filed:

Mar. 09, 2000
Applicant:
Inventors:

Thomas G. Ference, Essex Junction, VT (US);

Kurt R. Kimmel, Jericho, VT (US);

Alain Loiseau, Williston, VT (US);

Jed H. Rankin, Burlington, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract

A method for making electrical contacts to device regions in a semiconductor substrate, and the resulting structure, is presented. A first set of borderless contacts is initially formed. This first set of contacts is then contacted by a second series of smaller, upper-level contacts. The second set of contacts also contact the gate of the device. The structure which results has a form wherein there are stacked contacts to the diffusion layer, and a single level contact to the device gate. The structure further provides local interconnectability over gate structures.


Find Patent Forward Citations

Ference, Thomas. (2003). Dual level contacts and method for forming (U.S. Patent No. 6534389). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6534389

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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