One cell programmable switch using non-volatile cell

Abstract

A one transistor, non-volatile programmable switch is less complex and requires less area than prior art devices. The programmable switch is used in an integrated circuit and comprises a first node and a second node coupled with corresponding circuit elements in the integrated circuit. A single, non-volatile programmable transistor having a drain coupled to one of the first node and second node, a source coupled to the other of the first node and second node, gate coupled to an energizing conductor, the data storage structure constitute the programmable switch. The non-volatile programmable transistor consists of a mask programmable ROM cell, or a charge programmable device, in which the data storage structure comprises a floating gate or a nitride layer, or other charge trapping layer, between oxides or other insulators. A charge pump is coupled to the energizing conductor to produce a boosted voltage during logical operation of integrated circuit, so that voltage dissipation across the programmable switch is minimized or eliminated. In an embodiment, in which a charge programmable device is used, programmable circuitry is coupled to the first and second nodes, and to the energizing conductor to apply voltages sufficient to inject and remove charge from the charge storage structure for programming the charge programmable device. For integrated circuits in which voltages used for programming and erasing the non-volatile charge programmable device are high relative to the design rule for the circuit elements to be interconnected, a structure to withstand the high voltages is included.